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價格：電議
所在地：浙江 杭州市
型號：光電二管
更新時間：2017-03-29
瀏覽次數(shù)：2329
公司地址：中國浙江省杭州市西湖區(qū)申花路789號劍橋公社D座717室
新勢力光電(先生) 經(jīng)理
杭州新勢力光電技術有限公司（www.NewOpto.com） 是一家專業(yè)從事激光器、光學測量、光學元器件、太赫茲系統(tǒng)、化學分析儀器的市場推廣和技術服務，并且提供系統(tǒng)集成和方案定制的綜合性光電技術服務商。公司 秉承“誠信、創(chuàng)新、專業(yè)、共贏”理念，努力為中國的光電企業(yè)、科研機構、高等院校提供專業(yè)而優(yōu)質的技術、產(chǎn)品和應用。我們專注于激光，致力于成為一家值得 信賴和尊重的光電技術服務商。
新勢力光電（www.NewOpto.com）面向光電領域的工業(yè)開發(fā)和科學研究，供應如下產(chǎn)品與服務：激光器：半導體激光器、固體激光器、氣體激光器、光纖激光器、窄線寬激光器、可調(diào)諧激光器、飛秒激光器、Cobolt激光器、Roithner激光器。光學測量：光束質量分析儀、位敏探測系統(tǒng)、光束準直系統(tǒng)、光譜分析儀器、激光功率計、激光波長計、紅外觀察儀、透鏡分析系統(tǒng)。光學元器件：激光防護眼鏡、光電探測器、壓力傳感器、濾光片、可飽和吸收鏡、光源/LED、光纖、光學透鏡、SERS拉曼芯片、單光子計數(shù)器、體布拉格光柵、激光顯示卡。太赫茲系統(tǒng)：Rainbow太赫茲晶體及系統(tǒng)、Batop太赫茲組件及系統(tǒng)、Tydex太赫茲元件。化學分析儀器：Wilks化學分析儀器（InfraSpec VFA-IR光譜儀、InfraCal油脂分析儀、InfraRan氣體分析儀、InfraCal Soot Meter煙塵儀）、Scientech電子分析天平。
電話：0571-85152711
傳真：0571-85152722
手機：188-5711-5252
400熱線：400-007-1064
企業(yè)QQ：400-007-1064
郵箱：Sales@NewOpto.com
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UV/blue sensitive photodiodes
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|||||
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Type No.
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Active area
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Dark current
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Rise time
|
||
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Chip
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Package
|
Size
|
Area
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5V
|
410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PS1-2
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TO52
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1.0x1.0
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1
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0.01
|
50
|
|
PS1-2
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LCC6.1
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1.0x1.0
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1
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0.01
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50
|
|
PC5-2
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TO5
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? 2.52
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5
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0.3
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150
|
|
PS7-2
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TO5
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2.66x2.66
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7
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0.4
|
200
|
|
PC10-2
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TO5
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? 3.57
|
10
|
1
|
300
|
|
PS13-2
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TO5
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3.5x3.5
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13
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1
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300
|
|
PS33-2
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TO8
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5.7x5.7
|
33
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2
|
600
|
|
PC50-2
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BNC
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? 7.98
|
50
|
5
|
1000
|
|
PS100-2
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BNC
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10x10
|
100
|
10
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2000
|
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PS100-2
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CERpin
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10x10
|
100
|
10
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2000
|
|
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm?or?300nm?or?350nm
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|||||
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Blue/green sensitive photodiodes
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|||||
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Type No.
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Active area
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Dark current
|
Rise time
|
||
|
Chip
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Package
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Size
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Area
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5V
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410nm 5V 50Ω
|
|
mm
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mm2
|
nA
|
ns
|
||
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PC1-6b
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TO52S3
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? 1.13
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1
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0.05
|
10
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|
PC5-6b
|
TO5
|
? 2.52
|
5
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0.1
|
20
|
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PS7-6b
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TO5
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2.7x2.7
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7
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0.15
|
25
|
|
PC10-6b
|
TO5
|
? 3.57
|
10
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0.2
|
45
|
|
PS13-6b
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TO5
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3.5x3.5
|
13
|
0.25
|
50
|
|
PS33-6b
|
TO8
|
5.7x5.7
|
33
|
0.6
|
140
|
|
PS100-6b
|
CERpin
|
10x10
|
100
|
1
|
200
|
|
PS100-6b
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LCC10S
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10x10
|
100
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1
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200
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Band pass filter modules: PR20-6b TO5i with center wavelength 488nm?or?550nm?or?633nm?or? 680nm
|
|||||
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High speed photodiodes (for fast rise times at low reverse voltages)
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|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
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Size
|
Area
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20V
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850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PS0.25-5
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LCC6.1
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0.5x0.5
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0.25
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0.1
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0.4
|
|
PS0.25-5
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TO52S3
|
0.5x0.5
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0.25
|
0.1
|
0.4
|
|
PC0.55-5
|
TO52S1
|
? 0.84
|
0.55
|
0.2
|
1
|
|
PC0.55-5
|
LCC6.1
|
? 0.84
|
0.55
|
0.2
|
1
|
|
PS1-5
|
LCC6.1
|
1.0x1.0
|
1
|
0.2
|
1.5
|
|
PS1-5
|
TO52S3
|
1.0x1.0
|
1
|
0.2
|
1.5
|
|
PS7-5
|
TO5
|
2.7x2.7
|
7
|
0.5
|
2
|
|
PS11.9-5
|
TO5
|
3.45x3.45
|
11.9
|
1
|
3
|
|
PC20-5
|
TO8
|
? 5.05
|
20
|
2
|
3.5
|
|
PS33-5
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TO8
|
5.7x5.7
|
33
|
2
|
3.5
|
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PS100-5
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CERpinS
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10x10
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100
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2
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5
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PS100-5
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LCC10S
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10x10
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100
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2
|
5
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High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PS0.25-5t
|
LCC6.1
|
0.5x0.5
|
0.25
|
1
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0.4
|
|
PC0.55-5t
|
LCC6.1
|
? 0.84
|
0.55
|
5
|
1
|
|
PC0.55-5t
|
T1 3/4
|
? 0.84
|
0.55
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5
|
1
|
|
PC0.55-5t
|
T1 3/4 black
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? 0.84
|
0.55
|
5
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1
|
|
PS1-5t
|
LCC6.1
|
1.0x1.0
|
1
|
1
|
1
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|
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ? and X-radiation detection)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PC1-6
|
TO52S1
|
? 1.13
|
1
|
0.05
|
10
|
|
PC1-6
|
TO52S3
|
? 1.13
|
1
|
0.05
|
10
|
|
PC5-6
|
TO5
|
? 2.52
|
5
|
0.1
|
13
|
|
PS7-6
|
TO5
|
2.66×2.66
|
7
|
0.1
|
15
|
|
PC10-6
|
TO5
|
? 3.57
|
10
|
0.2
|
20
|
|
PS13-6
|
TO5
|
3.5×3.5
|
13
|
0.2
|
20
|
|
PC20-6
|
TO8
|
? 5.05
|
20
|
0.3
|
25
|
|
PC50-6
|
TO8S
|
? 7.98
|
50
|
0.5
|
30
|
|
PS100-6
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BNC
|
10×10
|
100
|
0.8
|
50
|
|
PS100-6
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CERpinS
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10×10
|
100
|
0.8
|
50
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|
PS100-6
|
LCC10S
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10×10
|
100
|
0.8
|
50
|
|
IR photodiodes with fully depletable (very low capacitance levels)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PC5-7
|
TO8i
|
? 2.52
|
5
|
0.05
|
45
|
|
PC10-7
|
TO8i
|
? 3.57
|
10
|
0.1
|
50
|
|
PC20-7
|
TO8Si
|
? 5.05
|
20
|
0.2
|
50
|
|
PS100-7
|
LCC10
|
10×10
|
100
|
1.5
|
50
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QP100-7
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LCC10
|
10×10
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4×25
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0.5
|
50
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|
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems?or?any applications using YAG lasers?or?similar NIR radiation sources)
|
|||||
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Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
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150V
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1064nm 150V 50Ω
|
|
mm
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mm2
|
nA
|
ns
|
||
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QP22-Q
|
TO8S
|
? 5.3
|
4×5.7
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1.5
|
5
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|
QP45-Q
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TO8S
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6.7×6.7
|
4×10.96
|
3
|
5
|
|
QP154-Q
|
TO1032i
|
? 14.0
|
4×38.5
|
10
|
6
|
|
PIN Series
|
Optimized for
|
Special features
|
Application
|
|
Series-2
|
200-500 nm
|
UV / Blue enhanced
|
Analytical instruments, readout for scintillators
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|
Series-6b
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400-650 nm
|
Blue / Green enhanced
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Photometric illuminometer
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|
Series-5b
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360-550 nm
|
High-speed Epitaxy, blue / green enhanced
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Optical fiber communication, high speed photometry
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|
Series-5t
|
400-850 nm
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High-speed Epitaxy, low voltage (3.5V)
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|
|
Series-5
|
450-950 nm
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High-speed Epitaxy
|
|
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Series-6
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700-950 nm
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General purpose, low dark current, fast response
|
Precision photometry, analytical instruments
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|
Series-7
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700-1100 nm
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Low capacity, full depletable
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High energy physics
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|
Series-Q
|
900-1100 nm
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Enhanced NIR sensitivity, low voltage, full depletable
|
YAG laser detection
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|
Series-i
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600-1700 nm
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InGaAs photodiodes, high IR sensitivity, low dark current
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Eye-sate laser detection
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|
Series-X
|
Ionizing radiation
|
With?or?without scintillator, ultra
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Medical, security, material
|
免責聲明：以上所展示的[光電二管 光電二管]信息由會員[杭州新勢力光電技術有限公司]自行提供，內(nèi)容的真實性、準確性和合法性由發(fā)布會員負責。
